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STW12NC60, STW12NK80Z, STW12NK90Z

Table of contents:
Info of STW12NC60
Info of STW12NK80Z
Info of STW12NK90Z

STW12NC60, STW12NK80Z, STW12NK90Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:00(advantage)

STW12NC60, STW12NK80Z, STW12NK90Z Datasheet download

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Part Number: STW12NK80Z

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-247

D/C: 00(advantage)

Description: MOSFET N-CH 900V 11A TO-247

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STW12NC60 General Description

The PowerMESH^TMII is the evolution of the first generation of MESH OVERLAY^TM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

STW12NC60 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	600	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	12	A
I_D	Drain Current (continuous) at T_c = 100	8	A
I_DM(•)	Drain Current (pulsed)	18	A
P_TOT	Total Dissipation at T_c = 25	190	W
	Derating Factor	1.52	W/
dv/dt(1)	Peak Diode Recovery voltage slope	3	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 11A, di/dt 100A/µs, V_DD V_(BR)DSS, T_jT_JMAX.

STW12NC60 Typical Application

· SWITCH MODE POWER SUPPLIES (SMPS)
· HIGH CURRENT, HIGH SPEED SWITCHING
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

STW12NK80Z Parameters

Technical/Catalog Information	STW12NK80Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	10.5A
Rds On (Max) @ Id, Vgs	750 mOhm @ 5.25A, 10V
Input Capacitance (Ciss) @ Vds	2620pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	87nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW12NK80Z STW12NK80Z 497 3256 5 ND 49732565ND 497-3256-5

STW12NK80Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STW12NK80Z Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	800	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	800	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	10.5	A
I_D	Drain Current (continuous) at T_c = 100	6.6	A
I_DM(.)	Drain Current (pulsed)	42	A
P_TOT	Total Dissipation at T_c = 25	190	W
	Derating Factor	1.51	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	6000	V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

(•)Pulse width limited by safe operating area
(1)I_SD 10.5A, di/dt 200A/µs, V_DD V_(BR)DSS, T_jT_JMAX.
(*)Limited only by maximum temperature allowed

STW12NK80Z Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STW12NK80Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES

STW12NK90Z Parameters

Technical/Catalog Information	STW12NK90Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	880 mOhm @ 5.5, 10V
Input Capacitance (Ciss) @ Vds	3500pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	152nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW12NK90Z STW12NK90Z 497 4421 5 ND 49744215ND 497-4421-5

STW12NK90Z General Description

The SuperMESH™ series is obtained through anextreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STW12NK90Z Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	900	V
V_DGR	Drain- gate Voltage (R_GS = 20 kΏ)	900	V
V_GS	Gate-Source Voltage	±30	V
I_D	Drain Current (continuous) at Tc = 25	11	A
I_D	Drain Current (continuous) at Tc = 100	7	A
I_DM(`)	Drain Current (pulsed)	44	A
P_TOT	Total Dissipation at Tc = 25	230	W
	Derating Factor	1.85	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=15KΏ)	6000	V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_j _Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(•)Pulse width limited by safe operating area (1)I_SD 7.6A, di/dt 100A/µs, V_DD V_(BR)DSS, T_j T_JMAX.
(*)Limited only by maximum temperature allowed

STW12NK90Z Features

STW12NK90Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES

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