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This fully clamped MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.
STW130NS04ZB Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
CLAMPED
V
VDGR
Drain-gate Voltage
CLAMPED
V
VGS
Gate- source Voltage
CLAMPED
V
ID
Drain Current (continuos) at TC = 25
80
A
ID
Drain Current (continuos) at TC = 100
60
A
IDG
Drain Gate Current (continuous)
50
mA
IGS
Gate Source Current (continuous)
50
mA
IDM(`)
Drain Current (pulsed)
320
A
PTOT
Total Dissipation at TC = 25
300
W
Derating Factor
2.0
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K)
4
kV
Tj Tstg
Operating Junction Temperature Storage Temperature
55 to 175
(`) Pulse width limited by safe operating area
STW130NS04ZB Features
` TYPICAL RDS(on) = 7 m ` 100% AVALANCHE TESTED ` LOW CAPACITANCE AND GATE CHARGE ` 175°C MAXIMUM JUNCTION TEMPERATURE
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STW13NB60 Maximum Ratings
Symbol
Parameter
Value
Unit
STW13NB60
STH13NB60FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
13
8.6
A
ID
Drain Current (continuos) at TC = 100°C
8.2
5.4
A
IDM ()
Drain Current (pulsed)
52
52
A
PTOT
Total Dissipation at TC = 25°C
190
80
W
Derating Factor
1.52
0.64
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
4
4
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2000
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
</TABLE
STW13NB60 Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES(SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE