STW10NB60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.8 Ohms


Application

· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
· HIGH CURRENT, HIGH SPEED SWITCHING


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain- gate Voltage (RGS = 20 k)	600	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	10	A
ID	Drain Current (continuous) at Tc = 100	6.2	A
IDM(•)	Drain Current (pulsed)	40	A
PTOT	Total Dissipation at Tc = 25	160	W
	Derating Factor	1.28	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(•) Pulse width limited by safe operating area October 1998                     ( 1) I_SD 310A, di/dt 3 200 A/ms, V_DD V_(BR)DSS, T_j  T_JMAX


Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics STW10NB60 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.