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STW10NC70Z

Application·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION·WELDING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 700 V VDGR Drain- gate Voltage (RGS = 20 k) 700 V VGS Gate-source Voltage ±25 V ID Dra...

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SeekIC No. : 004509135 Detail

STW10NC70Z: Application·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION·WELDING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 700 V ...

STW10NC70Z Data Sheet

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Part Number:
STW10NC70Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 700 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 700 V
VGS

Gate-source Voltage

 ±25 V
ID

Drain Current (continuous) at Tc = 25

10.6 A
ID

Drain Current (continuous) at Tc = 100

6.7 A
IDM(•)

Drain Current (pulsed)

 42 A
PTOT

Total Dissipation at Tc = 25

190 W

Derating Factor

 1.51 W/

 IGS

 Gate-source Current (*)

 ±50

 mA

 VESD(G-S)

 Gate source ESD(HBM-C=100pF, R=15K)

 4

 KV

dv/dt(1)

 Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

 -65 to 150
Tj

Max. Operating Junction Temperature

 150
(•)Pulse width limited by safe operating area
(1)ISD 10.6A, di/dt 100A/µs, VDD  V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed


Description

The STW10NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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