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Application·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION·WELDING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 700 V VDGR Drain- gate Voltage (RGS = 20 k) 700 V VGS Gate-source Voltage ±25 V ID Dra...

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SeekIC No. : 004509135 Detail

STW10NC70Z: Application·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION·WELDING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 700 V ...

STW10NC70Z Data Sheet

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Part Number:: STW10NC70Z
Supply Ability:: 5000

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Upload time: 2024/11/21

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Description

Application

·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	700	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	700	V
V_GS	Gate-source Voltage	±25	V
I_D	Drain Current (continuous) at T_c= 25	10.6	A
I_D	Drain Current (continuous) at T_c = 100	6.7	A
I_DM(•)	Drain Current (pulsed)	42	A
P_TOT	Total Dissipation at T_c = 25	190	W
	Derating Factor	1.51	W/
I_GS	Gate-source Current (*)	±50	mA
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=15K)	4	KV
dv/dt(1)	Peak Diode Recovery voltage slope	3	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 10.6A, di/dt 100A/µs, V_DD V_(BR)DSS, T_j _TJMAX.
(*)Limited only by maximum temperature allowed

Description

The STW10NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

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