Position: Home  > All Categories> Integrated Circuits (ICs) > STW10NA50

STW10NA50

MOSFET TO-247 N-CH 800V 6A

product image

STW10NA50 Picture
See larger image
SeekIC No. : 00166178 Detail

STW10NA50: MOSFET TO-247 N-CH 800V 6A

STW10NA50 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STW10NA50
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.6 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.8 Ohms
Continuous Drain Current : 9.6 A


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWERSUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND 
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
STW/STH10NA50
STH10NA50FI
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain-gate Voltage (RGS = 20 kW)
500
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25°C
9.6
5.6
A
ID
 Drain Current (continuos) at TC = 100°C
6.1
3.5
A
IDM ()
 Drain Current (pulsed)            38
38
A
PTOT
 Total Dissipation at TC = 25°C
150
60
W
 Derating Factor
1.2
0.48
W/°C
VISO
 Insulation Withstand Voltage (DC)
-
4000
V
Tstg
 Storage Temperature
65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C



Description

This series of POWER MOSFETS STW10NA50 represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Cable Assemblies
CS1W-CN114
XW2Z-500T
Filters
PICO2205A
PICO2204A
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more