Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-247
Continuous Drain Current
: 9 A
Drain-Source Breakdown Voltage
: 800 V
Resistance Drain-Source RDS (on)
: 900 mOhms
Application HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES
DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVESpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
STP10NK80Z |
STP10NK80ZFP |
STW10NK80Z |
|
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
|
VGS |
Gate-Source Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
9 |
9 (*) |
9 |
A |
|
ID |
Drain Current (continuous) at Tc = 100
|
6 |
6 (*) |
6 |
A |
|
IDM(`) |
Drain Current (pulsed) |
36 |
36 (*) |
36 |
A |
|
PTOT(1) |
Total Dissipation at Tc = 25 |
160 |
40 |
160 |
W |
|
|
Derating Factor |
1.28 |
0.32 |
1.28 |
W/ |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4 |
KV |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| VISO |
Insulation Withstand Voltage (DC) |
|
2500 |
|
V |
|
Tstg
Tj |
Operating Junction Temperature
Storage Temperature |
-55 to 150
-55 to 150 |
|
(•)Pulse width limited by safe operating area
(1)ISD9A, di/dt200A/µs, VDD0V(BR)DSS, Tj0 TJMAX ((*) Limited only by maximum temperature allowedDescriptionThe STW10NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Parameters: | Technical/Catalog Information | STW10NK80Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2180pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW10NK80Z
STW10NK80Z
497 3254 5 ND
49732545ND
497-3254-5
|
STW10NK80Z Data Sheet
