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STW13NM50N, STW14N50, STW14NB50

Table of contents:
Info of STW13NM50N
Info of STW14N50
Info of STW14NB50

STW13NM50N, STW14N50, STW14NB50 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 247 D/C:08+/09+

STW13NM50N, STW14N50, STW14NB50 Datasheet download

Five Points

Part Number: STW13NM50N

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 247

D/C: 08+/09+

Description: MOSFET N-CH 500V 12A TO-247

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STW13NM50N Parameters

Technical/Catalog Information	STW13NM50N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	320 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	960pF @ 50V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW13NM50N STW13NM50N 497 7617 5 ND 49776175ND 497-7617-5

STW14NB50 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)at T_c = 100	500	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)at T_c = 100	500	V
V_GS	Gate-Source Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25	14	A
I_D	Drain Current (continuous) at T_c = 100	8	A
I_DM(`)	Drain Current (pulsed)	52	A
P_tot	Total Dissipation at T_c = 25	190	W
	Derating Factor	1.51	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area (1) I_SD 14 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX

STW14NB50 Typical Application

·SWITCH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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