STW10NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.75 Ohms


Features:

 `  TYPICAL R<sub>DS(on)</sub> = 0.65
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  GATE CHARGE MINIMIZED
 `  VERY LOW INTRINSIC CAPACITANCES 
 `  VERY GOOD MANUFACTURING REPEATIBILITY


Application

 ·  HIGH CURRENT, HIGH SPEED SWITCHING
 ·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
 ·  LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		TO-220/ D2PAK/I2PAK	TO-220FP	TO-247
VDS	Drain-source Voltage (VGS = 0)	600			V
VDGR	Drain-gate Voltage (RGS = 20 k)	600			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuos) at TC = 25	10	10(*)	10	A
ID	Drain Current (continuos) at TC = 100	5.7	5.7(*)	5.7	A
IDM()	Drain Current (pulsed)	36	36(*)	36	A
Ptot	Total Dissipation at TC = 25	115	35	156	W
	Derating Factor	0.92	0.28	1.25	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	55 to 150

() Pulse width limited by safe operating area
(1) I_SD 10 A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.


Description

The STW10NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STW10NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	750 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	1370pF @ 25V
Power - Max	156W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STW10NK60Z STW10NK60Z 497 3253 5 ND 49732535ND 497-3253-5