MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:ST D/C:TO
STW10NC60, STW10NC70Z, STW10NK60Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: ST
D/C: TO
Description: MOSFET N-CH 600V 10A TO-247
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PDF/DataSheet Download
Datasheet: STW10NC60
File Size: 345636 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW10NC70Z
File Size: 255238 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW10NK60Z
File Size: 700505 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
|
Symbol |
Parameter |
Value |
Unit | |
|
STW10NC60 |
STH10NC60FI | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
600 |
V | |
|
VGS |
Gate- source Voltage |
±30 |
V | |
|
ID |
Drain Current (continuos) at TC = 25°C |
10 |
10 (*) |
A |
|
ID |
Drain Current (continuos) at TC = 100°C |
6.3 |
6.3 (*) |
A |
|
IDM 1) |
Drain Current (pulsed) |
40 |
40 (*) |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
160 |
60 |
W |
| Derating Factor |
1.28 |
0.48 |
W/°C | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
3.5 |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- 4000 |
V | |
|
Tstg |
Storage Temperature |
55 to 150 |
°C | |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C | |
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
700 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
700 | V |
| VGS |
Gate-source Voltage |
±25 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
10.6 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
6.7 | A |
| IDM(•) |
Drain Current (pulsed) |
42 | A |
| PTOT |
Total Dissipation at Tc = 25 |
190 | W |
|
Derating Factor |
1.51 | W/ | |
|
IGS |
Gate-source Current (*) |
±50 |
mA |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=15K) |
4 |
KV |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
| Technical/Catalog Information | STW10NK60Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1370pF @ 25V |
| Power - Max | 156W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW10NK60Z STW10NK60Z 497 3253 5 ND 49732535ND 497-3253-5 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | ||
| TO-220/ D2PAK/I2PAK |
TO-220FP | TO-247 | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | ||
| VGS | Gate- source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuos) at TC = 25 |
10 |
10(*) |
10 |
A |
| ID | Drain Current (continuos) at TC = 100 |
5.7 |
5.7(*) |
5.7 |
A |
| IDM() | Drain Current (pulsed) |
36 |
36(*) |
36 |
A |
| Ptot | Total Dissipation at TC = 25 |
115 |
35 |
156 |
W |
| Derating Factor |
0.92 |
0.28 |
1.25 |
W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
4000 |
V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
- |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 |
|||
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