RFK70N06, RFL1N08, RFL1N08L Selling Leads, Datasheet
MFG:43 Package Cooled:TO-3 D/C:N/A
RFK70N06, RFL1N08, RFL1N08L Datasheet download
Part Number: RFK70N06
MFG: 43
Package Cooled: TO-3
D/C: N/A
RFK70N06, RFL1N08, RFL1N08L
- Table of contents:
Info of RFK70N06
Info of RFL1N08
Info of RFL1N08L
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About RFK70N06
PDF/DataSheet Download
Datasheet: RFK70N06
File Size: 88455 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFL1N08
PDF/DataSheet Download
Datasheet: RFL1N08
File Size: 31289 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFL1N08L
PDF/DataSheet Download
Datasheet: RFL1N08L
File Size: 39560 KB
Manufacturer: Thomson Consumer Electronics
Download : Click here to Download
RFK70N06 Maximum Ratings
| RFK70N06 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 60 | V |
| Continuous Drain Current ID | 700 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to Peak Current Curve | A |
| Gate to Source Voltage VGS | ±20 | V |
| Maximum Power Dissipation PD | Refer to UIS Curve | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.0667 | A |
| Pulsed Avalanche Rating UIS | Figures 6, 14, 15 | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
RFK70N06 Features
• 70A, 60V
• rDS(ON) = 0.014W
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• rDS(ON) = 0.014W
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
RFL1N08 General Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.
RFL1N08 Maximum Ratings
| RFL1N08 | RFL1P10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | V |
| Continuous Drain Curren ID | 1 | 1 | A |
| Pulsed Drain Current (Note 3) IDM | 5 | 5 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s.TL | 3030 | 300 | o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFL1N08 Features
• 1A, 80V and 100V
• rDS(ON) = 1.200W
• rDS(ON) = 1.200W
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