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RFL1N20

Features: • 1A, 180V and 200V• rDS(ON) = 3.65W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 Guidelines for Soldering Surface...

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RFL1N20: Features: • 1A, 180V and 200V• rDS(ON) = 3.65W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedan...

RFL1N20 Data Sheet

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Part Number:
RFL1N20
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1A, 180V and 200V
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFL1N18 RFL1N20 UNITS
Drain to Source Voltage (Note 1) VDSS 180 200 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 180 200 V
Continuous Drain Curren ID 1 1 A
Pulsed Drain Current (Note 3) IDM 5 5 V
Maximum Power Dissipation PD ±20 ±20 V
Linear Derating Factor 0.0667 0.0667 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL 3030 300 o C
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFL1N20 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFL1N20 can be operated directly from integrated
circuits.




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