RFL2N05, RFL2N05L, RFL2N06 Selling Leads, Datasheet
MFG:HAR Package Cooled:1000 D/C:NO
RFL2N05, RFL2N05L, RFL2N06 Datasheet download
Part Number: RFL2N05
MFG: HAR
Package Cooled: 1000
D/C: NO
RFL2N05, RFL2N05L, RFL2N06
- Table of contents:
Info of RFL2N05
Info of RFL2N05L
Info of RFL2N06
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About RFL2N05
PDF/DataSheet Download
Datasheet: RFL2N05
File Size: 46063 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFL2N05L
PDF/DataSheet Download
Datasheet: RFL2N05L
File Size: 39560 KB
Manufacturer:
Download : Click here to Download
About RFL2N06
PDF/DataSheet Download
Datasheet: RFL2N06
File Size: 46063 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFL2N05 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated
circuits.
RFL2N05 Maximum Ratings
| RFL2N05 | RLF2N06 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | 60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | 60 | V |
| Gate to Source Voltage VGS | ±20 | ±20 | A |
| Pulsed IDM | 10 | 10 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s.TL | 3030 | 300 | o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFL2N05 Features
• 2A, 50V and 60V
• rDS(ON) = 0.95W
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.95W
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFL2N06 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated
circuits.
RFL2N06 Maximum Ratings
| RFL2N05 | RLF2N06 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | 60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | 60 | V |
| Gate to Source Voltage VGS | ±20 | ±20 | A |
| Pulsed IDM | 10 | 10 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s.TL | 3030 | 300 | o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFL2N06 Features
• 2A, 50V and 60V
• rDS(ON) = 0.95W
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.95W
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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