RFL1P08L, RFL2120, RFL4N12 Selling Leads, Datasheet
MFG:HARRIS Package Cooled:CAN3 D/C:09+
RFL1P08L, RFL2120, RFL4N12 Datasheet download
Part Number: RFL1P08L
MFG: HARRIS
Package Cooled: CAN3
D/C: 09+
MFG:HARRIS Package Cooled:CAN3 D/C:09+
RFL1P08L, RFL2120, RFL4N12 Datasheet download
MFG: HARRIS
Package Cooled: CAN3
D/C: 09+
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PDF/DataSheet Download
Datasheet: RFL1N08
File Size: 31289 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFL1N08
File Size: 31289 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFL4N12
File Size: 32589 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFL4N12 | RFL4N15 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 120 | 150 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 120 | 150 | V |
RMS Continuous ID | 4 | 4 | A |
Pulsed Drain Current (Note 3) IDM | 15 | 15 | V |
Maximum Power Dissipation PD | ±20 | ±20 | V |
Maximum Power Dissipation PD | 8.33 | 8.33 | W |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |