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RFL1N10

Features: • 1A, 80V and 100V• rDS(ON) = 1.200WSpecifications RFL1N08 RFL1P10 UNITS Drain to Source Voltage (Note 1) VDSS 80 100 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 80 100 V Continuous Drain Curren ID 1 1 A Pulsed Drain Current (Note 3) IDM 5 ...

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RFL1N10: Features: • 1A, 80V and 100V• rDS(ON) = 1.200WSpecifications RFL1N08 RFL1P10 UNITS Drain to Source Voltage (Note 1) VDSS 80 100 V Drain to Gate Voltage (RGS = 1MW) (Not...

RFL1N10 Data Sheet

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Part Number:
RFL1N10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1A, 80V and 100V
• rDS(ON) = 1.200W


Specifications

  RFL1N08 RFL1P10 UNITS
Drain to Source Voltage (Note 1) VDSS 80 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 80 100 V
Continuous Drain Curren ID 1 1 A
Pulsed Drain Current (Note 3) IDM 5 5 V
Maximum Power Dissipation PD ±20 ±20 V
Linear Derating Factor 0.0667 0.0667 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL 3030 300 o C
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-channel enhancement mode silicon-gate power field-effect transistors RFL1N10 designed for applications such  switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types RFL1N10 can be operated directly from integrated circuits.




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