Position: Home > DataSheet > Index R > RFL Series > RFL1N10, RFL1N10L, RFL1N12

Low Cost Custom Prototype PCB Manufacturer

RFL1N10, RFL1N10L, RFL1N12

Table of contents:
Info of RFL1N10
Info of RFL1N10L
Info of RFL1N12

RFL1N10, RFL1N10L, RFL1N12 Selling Leads, Datasheet

MFG:HARRIS Package Cooled:TO-39 D/C:advantage series

RFL1N10, RFL1N10L, RFL1N12 Datasheet download

Five Points

Part Number: RFL1N10

MFG: HARRIS

Package Cooled: TO-39

D/C: advantage series

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

RFL1N10 General Description

These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.

RFL1N10 Maximum Ratings

	RFL1N08	RFL1P10	UNITS
Drain to Source Voltage (Note 1) VDSS	80	100	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	80	100	V
Continuous Drain Curren ID	1	1	A
Pulsed Drain Current (Note 3) IDM	5	5	V
Maximum Power Dissipation PD	±20	±20	V
Linear Derating Factor	0.0667	0.0667	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	^o C
Linear Derating Factor	0.0667	0.0667	W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL	3030	300	^oC
Leads at 0.063in (1.6mm) from Case for 10s. TL	260	260	^oC

RFL1N10 Features

• 1A, 80V and 100V
• rDS(ON) = 1.200W

RFL1N10L General Description

This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a specialgate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

RFL1N10L Maximum Ratings

	RFL1N10L	UNITS
Drain to Source Voltage (Note 1) V_DSS	100	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	100	V
Continuous Drain Current ID	1	A
Pulsed Drain Current (Note 3) I_DM	5	A
Gate to Source Voltage V_GS	±10	V
Maximum Power Dissipation PD	8.33	W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID	0.0667	A
Pulsed Avalanche Rating UIS	Figures 6, 14, 15
Operating and Storage Temperature .TJ, T^STG	-55 to 150	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	^oC

RFL1N10L Features

• 1A, 100V
• rDS(ON) = 1.200W

RFL1N12 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.

RFL1N12 Maximum Ratings

	RFL1N12L	RFL1N15L	UNITS
Drain to Source Voltage (Note 1) VDSS	120	150	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	120	150	V
Continuous Drain Curren ID	1	1	A
Pulsed Drain Current (Note 3) IDM	5	5	V
Maximum Power Dissipation PD	±20	±20	V
Linear Derating Factor	0.0667	0.0667	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	^o C
Linear Derating Factor	0.0667	0.0667	W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL	3030	300	^oC
Leads at 0.063in (1.6mm) from Case for 10s. TL	260	260	^oC

RFL1N12 Features

• 1A, 120V and 150V
• rDS(ON) = 1.9W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components