RFL1N18, RFL1N18L, RFL1N20 Selling Leads, Datasheet
MFG:HARRIS Package Cooled:1000 D/C:NO
RFL1N18, RFL1N18L, RFL1N20 Datasheet download
Part Number: RFL1N18
MFG: HARRIS
Package Cooled: 1000
D/C: NO
RFL1N18, RFL1N18L, RFL1N20
- Table of contents:
Info of RFL1N18
Info of RFL1N18L
Info of RFL1N20
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About RFL1N18
PDF/DataSheet Download
Datasheet: RFL1N18
File Size: 44401 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFL1N18L
PDF/DataSheet Download
Datasheet: RFL1N18L
File Size: 39560 KB
Manufacturer:
Download : Click here to Download
About RFL1N20
PDF/DataSheet Download
Datasheet: RFL1N20
File Size: 44401 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFL1N18 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated
circuits.
RFL1N18 Maximum Ratings
| RFL1N18 | RFL1N20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 180 | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | V |
| Continuous Drain Curren ID | 1 | 1 | A |
| Pulsed Drain Current (Note 3) IDM | 5 | 5 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s.TL | 3030 | 300 | o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFL1N18 Features
• 1A, 180V and 200V
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFL1N20 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated
circuits.
RFL1N20 Maximum Ratings
| RFL1N18 | RFL1N20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 180 | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | V |
| Continuous Drain Curren ID | 1 | 1 | A |
| Pulsed Drain Current (Note 3) IDM | 5 | 5 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s.TL | 3030 | 300 | o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFL1N20 Features
• 1A, 180V and 200V
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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