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RFL1N12L, RFL1N15, RFL1N15L

Table of contents:
Info of RFL1N12L
Info of RFL1N15
Info of RFL1N15L

RFL1N12L, RFL1N15, RFL1N15L Selling Leads, Datasheet

MFG:HARRIS Package Cooled:NO D/C:NO

RFL1N12L, RFL1N15, RFL1N15L Datasheet download

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Part Number: RFL1N12L

MFG: HARRIS

Package Cooled: NO

D/C: NO

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RFL1N12L General Description

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

RFL1N12L Maximum Ratings

	RFL1N12L	RFL1N15L	UNITS
Drain to Source Voltage (Note 1) VDSS	120	150	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	120	150	V
Continuous Drain Curren ID	1	1	A
Pulsed Drain Current (Note 3) IDM	5	5	V
Maximum Power Dissipation PD	±20	±20	V
Linear Derating Factor	0.0667	0.0667	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	^o C
Linear Derating Factor	0.0667	0.0667	W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL	3030	300	^oC
Leads at 0.063in (1.6mm) from Case for 10s. TL	260	260	^oC

RFL1N12L Features

• 1A, 120V and 150V
• rDS(ON) = 1.900W

RFL1N15 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.

RFL1N15 Maximum Ratings

	RFL1N12L	RFL1N15L	UNITS
Drain to Source Voltage (Note 1) VDSS	120	150	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	120	150	V
Continuous Drain Curren ID	1	1	A
Pulsed Drain Current (Note 3) IDM	5	5	V
Maximum Power Dissipation PD	±20	±20	V
Linear Derating Factor	0.0667	0.0667	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	^o C
Linear Derating Factor	0.0667	0.0667	W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL	3030	300	^oC
Leads at 0.063in (1.6mm) from Case for 10s. TL	260	260	^oC

RFL1N15 Features

• 1A, 120V and 150V
• rDS(ON) = 1.9W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

RFL1N15L General Description

RFL1N15L Maximum Ratings

	RFL1N12L	RFL1N15L	UNITS
Drain to Source Voltage (Note 1) VDSS	120	150	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	120	150	V
Continuous Drain Curren ID	1	1	A
Pulsed Drain Current (Note 3) IDM	5	5	V
Maximum Power Dissipation PD	±20	±20	V
Linear Derating Factor	0.0667	0.0667	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	^o C
Linear Derating Factor	0.0667	0.0667	W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL	3030	300	^oC
Leads at 0.063in (1.6mm) from Case for 10s. TL	260	260	^oC

RFL1N15L Features

• 1A, 120V and 150V
• rDS(ON) = 1.900W

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