RFL1N20L, RFL1P, RFL1P08 Selling Leads, Datasheet
MFG:HARRIS Package Cooled:TO-39 D/C:advantage series
RFL1N20L, RFL1P, RFL1P08 Datasheet download
Part Number: RFL1N20L
MFG: HARRIS
Package Cooled: TO-39
D/C: advantage series
RFL1N20L, RFL1P, RFL1P08
- Table of contents:
Info of RFL1N20L
Info of RFL1P
Info of RFL1P08
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About RFL1N20L
PDF/DataSheet Download
Datasheet: RFL1N20L
File Size: 39560 KB
Manufacturer:
Download : Click here to Download
About RFL1P08
PDF/DataSheet Download
Datasheet: RFL1P08
File Size: 43468 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFL1P08
PDF/DataSheet Download
Datasheet: RFL1P08
File Size: 43468 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFL1P08 General Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFL1P08 Maximum Ratings
| RFL1P08 | RFL1P10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -80 | -100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -80 | -100 | V |
| Continuous Drain Curren ID | 1 | 1 | A |
| Pulsed Drain Current (Note 3) IDM | 5 | 5 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s.TL | 3030 | 300 | o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFL1P08 Features
• 1A, -80V and -100V
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
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