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RFL1N15L

Features: • 1A, 120V and 150V• rDS(ON) = 1.900WSpecifications RFL1N12L RFL1N15L UNITS Drain to Source Voltage (Note 1) VDSS 120 150 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 120 150 V Continuous Drain Curren ID 1 1 A Pulsed Drain Current (Note 3) ID...

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SeekIC No. : 004476565 Detail

RFL1N15L: Features: • 1A, 120V and 150V• rDS(ON) = 1.900WSpecifications RFL1N12L RFL1N15L UNITS Drain to Source Voltage (Note 1) VDSS 120 150 V Drain to Gate Voltage (RGS = 1MW) ...

RFL1N15L Data Sheet

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Part Number:
RFL1N15L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1A, 120V and 150V
• rDS(ON) = 1.900W


Specifications

  RFL1N12L RFL1N15L UNITS
Drain to Source Voltage (Note 1) VDSS 120 150 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 120 150 V
Continuous Drain Curren ID 1 1 A
Pulsed Drain Current (Note 3) IDM 5 5 V
Maximum Power Dissipation PD ±20 ±20 V
Linear Derating Factor 0.0667 0.0667 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL 3030 300 o C
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFL1N15L specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This RFL1N15L performance is accomplished through special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.




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