Features: • 1A, 100V• rDS(ON) = 1.200WSpecifications RFL1N10L UNITS Drain to Source Voltage (Note 1) VDSS 100 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 100 V Continuous Drain Current ID 1 A Pulsed Drain Current (Note 3) IDM 5 A Gate to Source Volta...
RFL1N10L: Features: • 1A, 100V• rDS(ON) = 1.200WSpecifications RFL1N10L UNITS Drain to Source Voltage (Note 1) VDSS 100 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 100 V ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
RFL1N10L | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 100 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 100 | V |
Continuous Drain Current ID | 1 | A |
Pulsed Drain Current (Note 3) IDM | 5 | A |
Gate to Source Voltage VGS | ±10 | V |
Maximum Power Dissipation PD | 8.33 | W |
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.0667 | A |
Pulsed Avalanche Rating UIS | Figures 6, 14, 15 | |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
This is an N-Channel enhancement mode silicon gate power field effect transistor RFL1N10L specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a specialgate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.