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RFL1N10L

Features: • 1A, 100V• rDS(ON) = 1.200WSpecifications RFL1N10L UNITS Drain to Source Voltage (Note 1) VDSS 100 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 100 V Continuous Drain Current ID 1 A Pulsed Drain Current (Note 3) IDM 5 A Gate to Source Volta...

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SeekIC No. : 004476561 Detail

RFL1N10L: Features: • 1A, 100V• rDS(ON) = 1.200WSpecifications RFL1N10L UNITS Drain to Source Voltage (Note 1) VDSS 100 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 100 V ...

RFL1N10L Data Sheet

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Part Number:
RFL1N10L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 1A, 100V
• rDS(ON) = 1.200W


Specifications

  RFL1N10L UNITS
Drain to Source Voltage (Note 1) VDSS 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 100 V
Continuous Drain Current ID 1 A
Pulsed Drain Current (Note 3) IDM 5 A
Gate to Source Voltage VGS ±10 V
Maximum Power Dissipation PD 8.33 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 0.0667 A
Pulsed Avalanche Rating UIS Figures 6, 14, 15  
Operating and Storage Temperature .TJ, TSTG -55 to 150 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C



Description

This is an N-Channel enhancement mode silicon gate power field effect transistor RFL1N10L specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a specialgate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.




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