IRLU8113, IRLU9343, IRLW530ATM Selling Leads, Datasheet
MFG:IR Package Cooled:TO-251 D/C:new
IRLU8113, IRLU9343, IRLW530ATM Datasheet download
Part Number: IRLU8113
MFG: IR
Package Cooled: TO-251
D/C: new
MFG:IR Package Cooled:TO-251 D/C:new
IRLU8113, IRLU9343, IRLW530ATM Datasheet download
MFG: IR
Package Cooled: TO-251
D/C: new
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PDF/DataSheet Download
Datasheet: IRLU8113
File Size: 205309 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU9343
File Size: 251855 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Parameter |
Max. |
Units | |
VDS | Drain-to-Source Voltage |
30 |
V |
VGS | Gate-to-Source Voltage |
± 20 |
|
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
94 |
|
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
67 |
A |
IDM | Pulsed Drain Current |
380 |
|
PD @TC = 25°C | Maximum Power Dissipation |
89 |
W |
PD @TC = 100°C | Maximum Power Dissipation |
44 |
|
Linear Derating Factor |
0.59 |
W/°C | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
Mounting torque, 6-32 or M3 screw | 10 lbfin (1.1 Nm) |
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Parameter |
Max |
Units | |
VDS | Drain-to-Source Voltage |
55 |
V |
VGS | Gate-to-Source Voltage |
±20 |
|
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
-20 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
-14 |
|
IDM | Pulsed Drain Current |
-60 |
|
PD @TC = 25°C | Power Dissipation |
79 |
W |
PD @TC = 100°C | Power Dissipation |
39 |
|
Linear Derating Factor |
0.53 |
W/°C | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 |
°C |
Clamping Pressure |
N |