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· High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters · Power Management for Netcom, Computing and Portable Applications. · Lead-Free
IRLU3915 General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Operating Junction and TSTG Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
IRLU3915 Features
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
IRLU4343 General Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
IRLU4343 Maximum Ratings
Parameter
Max
Units
VDS
Drain-to-Source Voltage
55
V
VGS
Gate-to-Source Voltage
±20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
26
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
19
IDM
Pulsed Drain Current
80
PD @TC = 25°C
Power Dissipation
79
W
PD @TC = 100°C
Power Dissipation
39
Linear Derating Factor
0.53
W/°C
TJ TSTG
Operating Junction and Storage Temperature Range
-40 to + 175
°C
Clamping Pressure
N
IRLU4343 Features
Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive Avalanche Capability for Robustness and Reliability Multiple Package Options