MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:new
IRLU3802PBF, IRLU3915, IRLU4343 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-251
D/C: new
Description: MOSFET N-CH 12V 84A I-PAK
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PDF/DataSheet Download
Datasheet: IRLU3802PBF
File Size: 284929 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU3915
File Size: 595632 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU4343
File Size: 261304 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLU3802PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 84A |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 15A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 2490pF @ 6V |
| Power - Max | 88W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 41nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLU3802PBF IRLU3802PBF |
| Symbol | Parameter |
Max. |
Units |
| VDS | Drain-Source Voltage |
12 |
V |
| VGS | Gate-to-Source Voltage |
± 12 |
V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 4.5V |
84 |
A |
| ID @ TA =100°C | Continuous Drain Current, VGS @ 4.5V |
60 | |
| IDM | Pulsed Drain Current |
320 | |
| PD @TC = 25°C | Maximum Power Dissipation |
88 |
W |
| PD @TC = 100°C | Maximum Power Dissipation |
44 |
W |
| Linear Derating Factor |
0.59 |
mW/ | |
| TJ , TSTG | Junction and Storage Temperature Range |
-55 to + 175 |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
|
|
Parameter | Max. | Units |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon limited) | 61 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig.9) | 43 |
|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package limited) | 30 | |
| IDM | Pulsed Drain Current | 240 |
|
| PD @TC = 25°C | C Power Dissipation | 120 | W |
|
|
Linear Derating Factor | 0.77 | W/°C |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 200 | mJ |
| EAS (6 sigma) | Single Pulse Avalanche Energy Tested Value | 600 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and TSTG Storage Temperature Range |
-55 to + 150 | °C |
|
|
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
|
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
| Parameter |
Max |
Units | |
| VDS | Drain-to-Source Voltage |
55 |
V |
| VGS | Gate-to-Source Voltage |
±20 |
|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
26 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
19 |
|
| IDM | Pulsed Drain Current |
80 |
|
| PD @TC = 25°C | Power Dissipation |
79 |
W |
| PD @TC = 100°C | Power Dissipation |
39 |
|
| Linear Derating Factor |
0.53 |
W/°C | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 |
°C |
| Clamping Pressure |
N |
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