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IRLR8203TR, IRLR8203TRL, IRLR8503PBF

Table of contents:
Info of IRLR8203TR
Info of IRLR8203TRL
Info of IRLR8503PBF

IRLR8203TR, IRLR8203TRL, IRLR8503PBF Selling Leads, Datasheet

MFG:IR Package Cooled:www.dayue-hk.com D/C:09+ ROHS

IRLR8203TR, IRLR8203TRL, IRLR8503PBF Picture

IRLR8203TR, IRLR8203TRL, IRLR8503PBF Datasheet download

Five Points

Part Number: IRLR8203TR

MFG: IR

Package Cooled: www.dayue-hk.com

D/C: 09+ ROHS

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IRLR8503PBF General Description

This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance.

The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including R_DS(on), gate charge and Cdv/dtinduced turn-on immunity. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

IRLR8503PBF Maximum Ratings

Parameter		Symbol	Limit	Units
Drain-Source Voltage Gate-Source Voltage		V_DS V_GS	40 ±20	V V
Continuous Drain or Source Current (V_GS 10V)	T_C = 25 T_C = 90	I_D I_S	44 32	A
Pulsed Drain Current		I_DM	196	A
Power Dissipation	T_C = 25 T_C = 90	P_D	62 30	W
Junction & Storage Temperature Range		T_J,T_stg	55 to 150
Continuous Source Current (Body Diode)		I_S	15	A
Pulsed source Current		I_SM	196	A

IRLR8503PBF Features

• N-Channel Application-Specific MOSFET
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Minimizes Parallel MOSFETs for high current applications
• Lead-Free

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