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This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors.
The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications.
The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.
IRLR8103VPBF Maximum Ratings
Parameter
Symbol
IRLR8103V
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain or Source Current
TC = 25
ID
91
A
(VGS > 10V)
TC= 90
63
Pulsed Drain Current
IDM
363
Power Dissipation
TC = 25
PD
115
W
TC = 90
60
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Continuous Source Current (Body Diode)
IS
91
A
Pulsed Source Current
ISM
363
IRLR8103VPBF Features
• N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free