MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:D-pak D/C:06+
IRLR3915 STOCK 125 IR 2004+ 0.3900, IRLR4343PBF, IRLR4343TRLPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: D-pak
D/C: 06+
Description: MOSFET N-CH 55V 26A DPAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLR4343PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 26A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 740pF @ 50V |
| Power - Max | 79W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR4343PBF IRLR4343PBF |
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
| Parameter | Max. | Units | |
| VDS | Drain-to-Source Voltage | 55 | V |
| VGS | Gate-to-Source Voltage | ±20 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 26 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 19 | |
| IDM | Pulsed Drain Current | 80 | |
| PD @TC = 25 | Power Dissipation | 79 | W |
| PD @TC = 100 | Power Dissipation | 39 | |
| Linear Derating Factor | 0.53 | W/ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 | |
| Clamping Pressure | N |
| Technical/Catalog Information | IRLR4343TRLPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 26A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 740pF @ 50V |
| Power - Max | 79W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR4343TRLPBF IRLR4343TRLPBF |
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