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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLR3105PBF Maximum Ratings
Parameter
Max.
Units
ID @ VGS = 12V, TC = 25
Continuous Drain Current
25
A
ID @ VGS = 12V, TC =100
Continuous Drain Current
18
IDM
Pulsed Drain Current
100
PD @ TC = 25
Max. Power Dissipation
57
W
Linear Derating Factor
0.38
W/
VGS
Gate-to-Source Voltage
±16
V
EAS
Single Pulse Avalanche Energy
61
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
94
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
3.4
V/ns
TJ TSTG
Operating Junction Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300 (1.6 mm from case )
IRLR3105PBF Features
` Logic-Level Gate Drive ` Advanced Process Technology ` Ultra Low On-Resistance ` 175 Operating Temperature ` Fast Switching ` Repetitive Avalanche Allowed up to Tjmax ` Lead-Free