Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The features of IRL3502SPbF are Advanced Process Technology, Surface Mount, Optimized for 4.5V-7.0V Gate Drive, Ideal for CPU Core DC-DC Converters, Fast Switching, Lead-Free These HEXFET Power MOSFETs were designed speoincally to meetthe demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efliciency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes upto HEX-4. It providesthe highest power capability and the lowest possible on-resistance in any existing surface mount package, The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The absolute maximum ratings of IRL3502SPbF are VGS (Gate-to-Source Voltage)=±10V, ID @ TC= 25°C(Continuous Drain Current, VGS @ 4.5V)=110A, ID @ TC = 100°C (Continuous Drain Current, VGS @ 4.5V )=67A, IDM (Pulsed Drain Current)=420A, EAS (Single Pulse Avalanche Energy)=390mJ, PD (@Tc = 25°C Power Dissipation)=140W, IAR( Avalanche Current)= 14A, EAR (Repetitive Avalanche Energy)=14mJ, dv/dt( Peak Diode Recovery dv/dt) =5.0V/ns, TJ (Operating Junction and)= -55 to + 150°C, TSTG(Storage Temperature Range Soldering Temperature, for 10 seconds )=300 (1.6mm from case )°C, RJC( Junction-to-Case )=0.89°C/W, RJA( Junction-to-Ambient )=40°C/W.