RFG-C3J3, RFH10N45, RFH10N50 Selling Leads, Datasheet
MFG:ST Package Cooled:BGA-L64P D/C:07+
RFG-C3J3, RFH10N45, RFH10N50 Datasheet download
Part Number: RFG-C3J3
MFG: ST
Package Cooled: BGA-L64P
D/C: 07+
RFG-C3J3, RFH10N45, RFH10N50
- Table of contents:
Info of RFG-C3J3
Info of RFH10N45
Info of RFH10N50
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About RFG3
PDF/DataSheet Download
Datasheet: RFG3
File Size: 67666 KB
Manufacturer: TFUNK [Vishay Telefunken]
Download : Click here to Download
About RFH10N45
PDF/DataSheet Download
Datasheet: RFH10N45
File Size: 33420 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFH10N50
PDF/DataSheet Download
Datasheet: RFH10N50
File Size: 33420 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFH10N45 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. RFH10N
RFH10N45 Maximum Ratings
| RFH10N45 | RFH10N50 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 450 | 500 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 500 | V |
| Continuous Drain Curren ID | 10 | 10 | A |
| Pulsed Drain Current (Note 3) IDM | 20 | 20 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 1.2 | 1.2 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFH10N45 Features
• 10A, 450V and 500V
• rDS(ON) = 0.600W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
• rDS(ON) = 0.600W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
RFH10N50 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. RFH10N
RFH10N50 Maximum Ratings
| RFH10N45 | RFH10N50 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 450 | 500 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 500 | V |
| Continuous Drain Curren ID | 10 | 10 | A |
| Pulsed Drain Current (Note 3) IDM | 20 | 20 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 1.2 | 1.2 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFH10N50 Features
• 10A, 450V and 500V
• rDS(ON) = 0.600W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
• rDS(ON) = 0.600W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
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