MOSFET TO-247 P-Ch Power
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 50 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 60 A |
Resistance Drain-Source RDS (on) : | 0.03 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole |
Package / Case : | TO-247 |
RFG60P05E | UNITS | |
Drain to Source Voltage (Note 1) VDSS | -50 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -50 | V |
Continuous Drain Current ID | 60 | A |
Pulsed Drain Current (Note 3) IDM | 200 | A |
Gate to Source Voltage VGS | ±20 | V |
Power Dissipation PD | 215 | W |
Derate Above 25oC | 1.43 | A |
Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
This is a P-Channel power MOSFET RFG60P05E manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFG60P05E was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits.
Formerly developmental type TA09835.
Technical/Catalog Information | RFG60P05E |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 60A, 10V |
Input Capacitance (Ciss) @ Vds | 7200pF @ 25V |
Power - Max | 215W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 450nC @ 20V |
Package / Case | TO-247 |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | RFG60P05E RFG60P05E |