RFH12N35, RFH12N40, RFH25N18 Selling Leads, Datasheet
MFG:HARRIS Package Cooled:TO-247 D/C:03+
RFH12N35, RFH12N40, RFH25N18 Datasheet download
Part Number: RFH12N35
MFG: HARRIS
Package Cooled: TO-247
D/C: 03+
RFH12N35, RFH12N40, RFH25N18
- Table of contents:
Info of RFH12N35
Info of RFH12N40
Info of RFH25N18
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About RFH12N35
PDF/DataSheet Download
Datasheet: RFH12N35
File Size: 41339 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFH12N40
PDF/DataSheet Download
Datasheet: RFH12N40
File Size: 41339 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFH25N18
PDF/DataSheet Download
Datasheet: RFH25N18
File Size: 445680 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
RFH12N35 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17434.
RFH12N35 Maximum Ratings
| RFH12N35 | RFH12N40 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 350 | 400 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | V |
| Continuous Drain Curren ID | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 24 | 24 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 1.2 | 1.2 | W/ oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFH12N35 Features
• 12A, 350V and 400V
• rDS(ON) = 0.380W
• Related Literature- TB334 "Guidelines for Soldering Surface MounComponents to PC Boards"
• rDS(ON) = 0.380W
• Related Literature- TB334 "Guidelines for Soldering Surface MounComponents to PC Boards"
RFH12N40 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17434.
RFH12N40 Maximum Ratings
| RFH12N35 | RFH12N40 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 350 | 400 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | V |
| Continuous Drain Curren ID | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 24 | 24 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 1.2 | 1.2 | W/ oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFH12N40 Features
• 12A, 350V and 400V
• rDS(ON) = 0.380W
• Related Literature- TB334 "Guidelines for Soldering Surface MounComponents to PC Boards"
• rDS(ON) = 0.380W
• Related Literature- TB334 "Guidelines for Soldering Surface MounComponents to PC Boards"
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