RFH25N20, RFH25P08, RFH25P10 Selling Leads, Datasheet
MFG:HARRIS Package Cooled:TO-247 D/C:03+
RFH25N20, RFH25P08, RFH25P10 Datasheet download
Part Number: RFH25N20
MFG: HARRIS
Package Cooled: TO-247
D/C: 03+
RFH25N20, RFH25P08, RFH25P10
- Table of contents:
Info of RFH25N20
Info of RFH25P08
Info of RFH25P10
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About RFH25N20
PDF/DataSheet Download
Datasheet: RFH25N20
File Size: 445680 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About RFH25P08
PDF/DataSheet Download
Datasheet: RFH25P08
File Size: 34004 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFH25P10
PDF/DataSheet Download
Datasheet: RFH25P10
File Size: 34004 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFH25P08 General Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.Formerly developmental type TA49230.
RFH25P08 Maximum Ratings
| RFH25P08 RFK25P08 |
RFH25P10 RFK25P10 |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -80 | -100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -80 | -100 | V |
| Continuous Drain Curren ID | -25 | -25 | A |
| Pulsed Drain Current (Note 3) IDM | -60 | -60 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFH25P08 Features
• -25A, -100V and -80V
• rDS(ON) = 0.150W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.150W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFH25P10 General Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.Formerly developmental type TA49230.
RFH25P10 Maximum Ratings
| RFH25P08 RFK25P08 |
RFH25P10 RFK25P10 |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -80 | -100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -80 | -100 | V |
| Continuous Drain Curren ID | -25 | -25 | A |
| Pulsed Drain Current (Note 3) IDM | -60 | -60 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFH25P10 Features
• -25A, -100V and -80V
• rDS(ON) = 0.150W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.150W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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