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RFH10N50

Features: • 10A, 450V and 500V• rDS(ON) = 0.600W• Related Literature- TB334 Guidelines for Soldering Surface MountComponents to PC Boards Specifications RFH10N45 RFH10N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 500 V Drain to Gate Voltage (RGS = 1MW) (N...

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RFH10N50: Features: • 10A, 450V and 500V• rDS(ON) = 0.600W• Related Literature- TB334 Guidelines for Soldering Surface MountComponents to PC Boards Specifications RFH10N45 RFH10N50 ...

RFH10N50 Data Sheet

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Part Number:
RFH10N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• 10A, 450V and 500V
• rDS(ON) = 0.600W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"


Specifications

  RFH10N45 RFH10N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V
Continuous Drain Curren ID 10 10 A
Pulsed Drain Current (Note 3) IDM 20 20 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation 150 150 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 1.2 1.2 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFH10N50 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFH10N50 can be operated directly from integrated circuits. Formerly developmental type TA17435. RFH10N




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