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RFH12N35

Features: • 12A, 350V and 400V• rDS(ON) = 0.380W• Related Literature- TB334 Guidelines for Soldering Surface MounComponents to PC Boards Specifications RFH12N35 RFH12N40 UNITS Drain to Source Voltage (Note 1) VDSS 350 400 V Drain to Gate Voltage (RGS = 1MW) (No...

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RFH12N35: Features: • 12A, 350V and 400V• rDS(ON) = 0.380W• Related Literature- TB334 Guidelines for Soldering Surface MounComponents to PC Boards Specifications RFH12N35 RFH12N40 ...

RFH12N35 Data Sheet

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Part Number:
RFH12N35
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• 12A, 350V and 400V
• rDS(ON) = 0.380W
• Related Literature- TB334 "Guidelines for Soldering Surface MounComponents to PC Boards"


Specifications

  RFH12N35 RFH12N40 UNITS
Drain to Source Voltage (Note 1) VDSS 350 400 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 350 400 V
Continuous Drain Curren ID 12 12 A
Pulsed Drain Current (Note 3) IDM 24 24 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation 150 150 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 1.2 1.2 W/ oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFH12N35 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types RFH12N35 can be operated directly from integrated circuits.

Formerly developmental type TA17434.




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