DescriptionThe RFH45N05 is a kind of N-chennel enhancement-mode sillcon-gate power field-effect translstors designed for applications such as switching regulators, switching converters, motor drlvers, relay drlvers, and drivers for high-power bipolar switching transistors requiring high speed and ...
RFH45N05: DescriptionThe RFH45N05 is a kind of N-chennel enhancement-mode sillcon-gate power field-effect translstors designed for applications such as switching regulators, switching converters, motor drlver...
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The RFH45N05 is a kind of N-chennel enhancement-mode sillcon-gate power field-effect translstors designed for applications such as switching regulators, switching converters, motor drlvers, relay drlvers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drlve power. These types can be operated directly from integrated circuits. The RFH-types are supplied in the JEDEC TO-218AC plastic package. The RFH45N05 types were formerly RCA developmental numbers TA9480A.
The features of RFH45N05 can be summarized as (1)SOA is po wer-dissipation Iimlted; (2)nanosecond swltchlng speeds; (3)linear iransler characteristics; (4)high input impedance; (5)majority carrier device; (6)high-current, low-inductance package.
The absolute maximum ratings of RFH45N05 are (1)drain-source voltage VDSS: 50V; (2)drain-gate voltage, Rgs=1M VDGR: 50 V; (3)gate-source voltage VGS: ±20V; (4)drain current, RMS continuous ID: 45A, pulsed IDM: 100A; (5)power dissipation @ Tg = 25°C Pr: 150W, derate above Tg = 25: 1.2W/°C; (6)operating and storage temperature TJ, TSTG: -55 to +150°C.