Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836
RFG60P06E Maximum Ratings
RFG60P06E
UNITS
Drain to Source Voltage (Note 1) VDSS
-60
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
-60
V
Continuous Drain Current ID
60
A
Pulsed Drain Current (Note 3) IDM
200
A
Gate to Source Voltage VGS
±20
V
Power Dissipation PD
215
W
Derate Above 25oC
1.43
A
Pulsed Avalanche Rating UIS
Refer to UIS SOA
Operating and Storage Temperature .TJ, TSTG
-55 to 150
o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL
300
o C
Package Body for 10s, See Techbrief 334 Tpkg
260
o C
RFG60P06E Features
• 60A, 60V • rDS(ON) = 0.030W • Temperature Compensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature
RFG70N06 Parameters
Technical/Catalog Information
RFG70N06
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25° C
70A
Rds On (Max) @ Id, Vgs
14 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds
2250pF @ 25V
Power - Max
150W
Packaging
Tube
Gate Charge (Qg) @ Vgs
156nC @ 20V
Package / Case
TO-247
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
RFG70N06 RFG70N06
RFG70N06 General Description
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49007.
RFG70N06 Maximum Ratings
UNITS
Drain-Source Voltage (Note 1)
VDSS
60
V
Drain-Gate Voltage.(RGS = 20kW) (Note 1)
VDGR
60
V
Continuous Drain Current
ID
70
A
Pulsed Drain Current (Note 3)
IDM
Refer to Peak Current Curve
Gate to Source Voltage
VGS
±20
A
Single Pulse Avalanche Rating
EAS
(Refer to UIS Curve)
Power Dissipation
PD
150
W
Linear Derating Factor
1.0
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Leads at 0.063in (1.6mm) from Case for 10s.
T L Tpkg
300 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RFG70N06 Features
• 70A, 60V • r DS(on) = 0.014W • Temperature Compensated PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • 175 Operating Temperature • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"