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RFG75N05E

Features: • 75A, 50V• rDS(ON) = 0.008W• Electrostatic Discharge Rated• UIS Rating Curve (Single Pulse)• 175oC Operating Temperature• Temperature Compensated PSPICE® Model ProvidedSpecifications RFG75N05E UNITS Drain to Source Voltage (Note 1) VDSS...

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RFG75N05E: Features: • 75A, 50V• rDS(ON) = 0.008W• Electrostatic Discharge Rated• UIS Rating Curve (Single Pulse)• 175oC Operating Temperature• Temperature Compensated PSPIC...

RFG75N05E Data Sheet

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Part Number:
RFG75N05E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 75A, 50V
• rDS(ON) = 0.008W
• Electrostatic Discharge Rated
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Temperature Compensated PSPICE® Model Provided


Specifications

  RFG75N05E UNITS
Drain to Source Voltage (Note 1) VDSS 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V
Continuous Drain Current ID 75 A
Pulsed Drain Current (Note 3) IDM 200 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 240 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 1.6 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 150 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFG75N05E. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs RFG75N05E are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA09821.




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