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RFG50N05L, RFG50N06, RFG50N06L

Table of contents:
Info of RFG50N05L
Info of RFG50N06
Info of RFG50N06L

RFG50N05L, RFG50N06, RFG50N06L Selling Leads, Datasheet

MFG:07+ Package Cooled:KA/INTRISII D/C:09+

RFG50N05L, RFG50N06, RFG50N06L Datasheet download

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Part Number: RFG50N05L

MFG: 07+

Package Cooled: KA/INTRISII

D/C: 09+

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RFG50N05L General Description

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Formerly developmental type TA09872.

RFG50N05L Maximum Ratings

	RFG50N05L	RFP50N05L	UNITS
Drain to Source Voltage (Note 1) VDSS	50	50	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	50	50	V
Continuous Drain Curren ID	50	50	A
Pulsed Drain Current (Note 3) IDM	130	130	V
Maximum Power Dissipation PD	±10	±10	V
Maximum Power Dissipation	110	110	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	^o C
Linear Derating Factor	0.88	0.88	W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	300	^oC
Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg	260	260	^oC

RFG50N05L Features

• 50A, 50V
• rDS(ON) = 0.022W
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

RFG50N06 General Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49018.

RFG50N06 Maximum Ratings

			UNITS
Drain to Source Voltage (Note 1)	V_DSS	60	V
Drain to Gate Voltage (R_GS = 20kW)(Note 1)	V_DGR	60	V
Gate to Source Voltage	V_GS	±20	V
Pulsed Drain Current (Figure 2)	I_D	50	A
Pulsed Drain Current	I_DM	(Figure 5)
Pulse Avalanche Rating	E_AS	(Figure 6, 14, 15)
Power Dissipation	P_D	131	W
Linear Derating Factor		0.877	W/
Operating and Storage Temperature	T_J, T_STG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T_L T_pkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

RFG50N06 Features

• 50A, 60V
• r _DS(ON) = 0.022W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature

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