IRHY58130CM, IRHY9130CM, IRHY93130CM Selling Leads, Datasheet
MFG:IR Package Cooled:TO-257AA D/C:05+
IRHY58130CM, IRHY9130CM, IRHY93130CM Datasheet download
Part Number: IRHY58130CM
MFG: IR
Package Cooled: TO-257AA
D/C: 05+
IRHY58130CM, IRHY9130CM, IRHY93130CM
- Table of contents:
Info of IRHY58130CM
Info of IRHY9130CM
Info of IRHY93130CM
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About IRH3054
PDF/DataSheet Download
Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHY9130CM
PDF/DataSheet Download
Datasheet: IRHY9130CM
File Size: 119313 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHY93130CM
PDF/DataSheet Download
Datasheet: IRHY93130CM
File Size: 119313 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHY9130CM General Description
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHY9130CM Maximum Ratings
|
Parameter |
Units | ||
|
ID @ VGS = -12V, TC = 25°C |
Continuous Drain Current |
-11 |
A |
|
ID @ VGS = -12V, TC = 100°C |
Continuous Drain Current |
-7.0 | |
|
IDM |
Pulsed Drain Current |
-44 | |
|
PD @ TC = 25°C |
Max. Power Dissipation |
75 |
W |
|
Linear Derating Factor |
0.6 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
150 |
mJ |
|
IAR |
Avalanche Current |
-11 |
A |
|
EAR |
Repetitive Avalanche Energy |
7.5 |
mJ |
|
dv/dt |
Repetitive Avalanche Energy |
-16 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
oC |
|
Lead Temperature |
300 (0.063 in (1.6mm)from case for 10s) | ||
|
Weight |
4.3 (Typical) |
g |
IRHY9130CM Features
· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight
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