IRHE9230, IRHE93230, IRHF57034 Selling Leads, Datasheet
MFG:IR Package Cooled:18-pin LCC D/C:00+
IRHE9230, IRHE93230, IRHF57034 Datasheet download
Part Number: IRHE9230
MFG: IR
Package Cooled: 18-pin LCC
D/C: 00+
IRHE9230, IRHE93230, IRHF57034
- Table of contents:
Info of IRHE9230
Info of IRHE93230
Info of IRHF57034
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About IRHE9230
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Datasheet: IRHE9230
File Size: 109772 KB
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About IRH3054
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Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
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About IRHF57034
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Datasheet: IRHF57034
File Size: 133839 KB
Manufacturer:
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IRHE9230 General Description
International Rectifier's RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHE9230 Maximum Ratings
|
Parameter |
Units | ||
|
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
-4.0 |
A |
|
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
-2.4 | |
|
IDM |
Pulsed Drain Current |
-16 | |
|
PD @ TC = 25°C |
Max. Power Dissipation |
25 |
W |
| Linear Derating Factor |
0.2 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
171 |
mJ |
|
IAR |
Avalanche Current |
-4.0 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-27 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Lead Temperature |
300 ( for 5s) | ||
| Weight |
300 ( for 5s) |
g |
IRHE9230 Features
· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight
IRHF57034 General Description
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHF57034 Maximum Ratings
|
Parameter |
Units | ||
|
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
12* |
A |
|
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
10 | |
|
IDM |
Pulsed Drain Current |
48 | |
|
PD @ TC = 25°C |
Max. Power Dissipation |
25 |
W |
| Linear Derating Factor |
0.2 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
270 |
mJ |
|
IAR |
Avalanche Current |
12 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
9.3 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to +150 |
|
| Storage Temperature Range |
300 (0.063 in.(1.6 mm from case for 10s)) | ||
| Weight |
0.98 ( Typical) |
g |
* Current is limited by internal wire diameter
IRHF57034 Features
· Single Event Effect (SEE) Hardened
· Ultra Low R DS(on)
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ultra Low R DS(on)
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
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