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IRH7230, IRH7250, IRH7250SE

Table of contents:
Info of IRH7230
Info of IRH7250
Info of IRH7250SE

IRH7230, IRH7250, IRH7250SE Selling Leads, Datasheet

MFG:IR Package Cooled:TO-204AA D/C:05+

IRH7230, IRH7250, IRH7250SE Datasheet download

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Part Number: IRH7230

MFG: IR

Package Cooled: TO-204AA

D/C: 05+

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IRH7230 General Description

The IRH7230 is a kind of International rectifier, providing high performance power MOSFETs for space applications. It is available in TO-204AE package.

It has some features as follows. (1) single event effect handed; (2) low RDS(on); (3) low total gate charge; (4) proton tolerant; (5) simple drive requirements; (6) ease of parelleling; (7) hermetically sealed; (8) cemaric package; (9) light weight.

The following is about its absolute maximum ratings. (1): continuous drain current is 9.0 A at TC is 25 and is 6.0 A at TC is 100 . (2): power dissipation is 75 W at TC is 25 ; (3): single pulse avalanche energy is 330 mJ; (4): repetitive avalanche energy is 7.5 mJ; (5): junction and storage temperature are from -55 to 175 ; (6): soldering temperature for 10 seconds is 300 . Then is about the electrical characteristics at TJ is 25 . (1): the minimum drain-to-source breakdown voltage is 200 V when VGS is 0 V and ID is 250 A; (2): the maximum turn-on delay time is 35 ns, rise time is 80 ns, turn-off delay time is 60 ns and fall time is 46 ns at VDD is 100 V and ID is 9.0 A; (3): the typical input capacitance is 1100 pF, output capacitance is 250 pF and reverse transfer capacitance is 65 pF when VDS is 25 V and f is 1.0 MHz.

IRH7250 General Description

International Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x10⁶ Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 10⁵ Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 10¹²Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.

IRH7250 Maximum Ratings

	Parameter	IRH7250, IRH8250	Units
I_D @ V_GS = 12V, T_C = 25	Continuous Drain Current	26	A
I_D @ V_GS = 12V, T_C = 100	Continuous Drain Current	16
I_DM	Pulsed Drain Current	104
P_D @ T_C= 25	Max. Power Dissipation	150	W
	Linear Derating Factor	1.2	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	500	mJ
I_AR	Avalanche Current	26	A
E_AR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063 in./1.6mm from case for 10s)
	Weight	11.5 (Typical)	g

IRH7250 Features

·Radiation Hardened up to 1 x 10⁶ Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed

IRH7250SE General Description

International Rectifier's RADHard^TM HEXFET^®MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

IRH7250SE Maximum Ratings

	Parameter		Units
I_D @ V_GS= 12V, T_C = 25°C	Continuous Drain Current	26	A
I_D @ V_GS = 12V, T_C = 100°C	Continuous Drain Current	16
I_DM	Pulsed Drain Current	104
PD @ T_C = 25°C	Max. Power Dissipation	150	W
	Linear Derating Factor	1.2	W/°C
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	500	mJ
I_AR	Avalanche Current	26	A
E_AR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt	5.9	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063 in. (1.6mm) from case for 10 sec.)
	Weight	11.5(Typical)	g

For footnotes refer to the last page

IRH7250SE Features

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Light Weight

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