IRHE7130, IRHE7230, IRHE8110 Selling Leads, Datasheet
MFG:IR Package Cooled:Standard D/C:9932
IRHE7130, IRHE7230, IRHE8110 Datasheet download
Part Number: IRHE7130
MFG: IR
Package Cooled: Standard
D/C: 9932
IRHE7130, IRHE7230, IRHE8110
- Table of contents:
Info of IRHE7130
Info of IRHE7230
Info of IRHE8110
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About IRHE7130
PDF/DataSheet Download
Datasheet: IRHE7130
File Size: 448787 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHE7230
PDF/DataSheet Download
Datasheet: IRHE7230
File Size: 275991 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRH3054
PDF/DataSheet Download
Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHE7230 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 5.5 | A |
| ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 3.5 | A |
| IDM | Pulsed Drain Current | 22 | A |
| PD @ TC = 25°C | Max. Power Dissipation | 25 | W |
| Linear Derating Factor | 0.2 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 240 | mJ |
| IAR | Avalanche Current | - | A |
| EAR | Repetitive Avalanche Energy | - | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ | Operating Junction | -55 to 150 | oC |
| TSTG | Storage Temperature Range | oC | |
| Pckg. Mounting Surface Temp. | 300 (for 5s) | oC | |
| Weight | 0.42(Typical) | g |
IRHE7230 Features
· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
IRHE8110 General Description
International Rectifier's RAD HARD technolog HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test ions, In ternational Rectifier's RAD HARD HEXFETs retaiidentical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization es high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process lizes International Rectifier's patented HEXFET technology the user can expect the highest quality and reliability in the ustry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, suchas voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHE8110 Maximum Ratings
| Parameter |
IRHE7130, IRHE8130 |
Units | |
| ID @VGS= 12V,TC=25 |
CContinuous Drain Curren |
3.5 |
A |
| ID@VGS=12V,TC =100 |
CContinuous Drain Curren |
2.2 | |
| IDM | Pulsed Drain Current |
14 | |
| PD @ TC = 25 |
CMax. Power Dissipation |
15 |
W |
| Linear Derating Factor |
0.12 |
W/ | |
| VGS | Gate-to-Source Voltage |
±20 |
V |
| EAS | Single Pulse Avalanche Energy |
68 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.5 |
V/ns |
| T J TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Lead Temperature |
300 (0.063 in. (1.6mm) from case for 10s) | ||
| Weight |
0.42 (typical) |
g |
IRHE8110 Features
·Radiation Hardened up to 1 x 10 6 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light Weight
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light Weight
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