IRH93250, IRHE53034, IRHE57034 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-204AE D/C:05+
IRH93250, IRHE53034, IRHE57034 Datasheet download
Part Number: IRH93250
MFG: IR
Package Cooled: TO-204AE
D/C: 05+
MFG:IR Package Cooled:TO-204AE D/C:05+
IRH93250, IRHE53034, IRHE57034 Datasheet download
MFG: IR
Package Cooled: TO-204AE
D/C: 05+
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PDF/DataSheet Download
Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRHE57034
File Size: 122113 KB
Manufacturer:
Download : Click here to Download
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
12 |
A |
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
7.4 | |
IDM |
Pulsed Drain Current |
48 | |
PD @ TC = 25°C |
Max. Power Dissipation |
25 |
W |
Linear Derating Factor |
0.2 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
85 |
mJ |
IAR |
Avalanche Current |
12 |
A |
EAR |
Repetitive Avalanche Energy |
2.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
3.4 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Pckg. Mounting Surface Temp. |
300 ( for 5s ) | ||
Weight |
11.5(Typical) |
g |