IRH7054, IRH7130, IRH7150 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-204AE D/C:00+
IRH7054, IRH7130, IRH7150 Datasheet download
Part Number: IRH7054
MFG: IR
Package Cooled: TO-204AE
D/C: 00+
MFG:IR Package Cooled:TO-204AE D/C:00+
IRH7054, IRH7130, IRH7150 Datasheet download
MFG: IR
Package Cooled: TO-204AE
D/C: 00+
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PDF/DataSheet Download
Datasheet: IRH7054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRH7130
File Size: 480212 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRH7150
File Size: 280438 KB
Manufacturer:
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International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
34 |
A |
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
21 | |
IDM |
Pulsed Drain Current |
136 | |
PD @ TC = 25°C |
Max. Power Dissipation |
150 |
W |
Linear Derating Factor |
1.2 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
34 |
A |
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300 ( 0.063 in.(1.6mm) from case for 10s) | ||
Weight |
11.5(Typical) |
g |