IRH8250, IRH8450, IRH9130 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-204AE D/C:05+
IRH8250, IRH8450, IRH9130 Datasheet download
Part Number: IRH8250
MFG: IR
Package Cooled: TO-204AE
D/C: 05+
IRH8250, IRH8450, IRH9130
- Table of contents:
Info of IRH8250
Info of IRH8450
Info of IRH9130
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About IRH8250
PDF/DataSheet Download
Datasheet: IRH8250
File Size: 325201 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRH8450
PDF/DataSheet Download
Datasheet: IRH8450
File Size: 358981 KB
Manufacturer:
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About IRH9130
PDF/DataSheet Download
Datasheet: IRH9130
File Size: 124698 KB
Manufacturer: IRF [International Rectifier]
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IRH8250 General Description
International Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRH8250 Maximum Ratings
| Parameter | IRH7250, IRH8250 | Units | |
| ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 26 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 16 | |
| IDM | Pulsed Drain Current | 104 | |
| PD @ TC = 25 | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 26 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 11.5 (Typical) | g |
IRH8250 Features
·Radiation Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
IRH8450 Maximum Ratings
| Parameter | Units | ||
|
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
11 |
A |
|
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
7.0 | |
|
IDM |
Pulsed Drain Current |
44 | |
|
PD @ TC = 25°C |
Max. Power Dissipation |
150 |
W |
| Linear Derating Factor |
1.2 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
|
IAR |
Avalanche Current |
11 |
A |
|
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
3.5 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Lead Temperature |
300 (0.063 in. (1.6mm) from case for 10 sec.) | ||
| Weight |
11.5(Typical) |
g |
IRH8450 Features
·Radiatio·Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
IRH9130 General Description
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRH9130 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25 | Continuous Drain Current | -11 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | -7.0 | |
| IDM | Pulsed Drain Current | -44 | |
| PD @ TC = 25 | Max. Power Dissipation | 75 | W |
| Linear Derating Factor | 0.6 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 190 | mJ |
| IAR | Avalanche Current | -11 | A |
| EAR | Repetitive Avalanche Energy | 7.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -10 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 11.5 (Typical) | g |
IRH9130 Features
·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight
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