Position: Home > DataSheet > Index I > IRH Series > IRHE57Z30, IRHE58Z30, IRHE7110

Low Cost Custom Prototype PCB Manufacturer

IRHE57Z30, IRHE58Z30, IRHE7110

Table of contents:
Info of IRHE57Z30
Info of IRHE58Z30
Info of IRHE7110

IRHE57Z30, IRHE58Z30, IRHE7110 Selling Leads, Datasheet

MFG:IR Package Cooled:18-pin LCC D/C:05+

IRHE57Z30, IRHE58Z30, IRHE7110 Datasheet download

Five Points

Part Number: IRHE57Z30

MFG: IR

Package Cooled: 18-pin LCC

D/C: 05+

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

IRHE57Z30 General Description

International Rectifier's R^5TMtechnology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm²)). The combination of low R_DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

IRHE57Z30 Maximum Ratings

	Parameter		Units
I_D @ V_GS= 12V, T_C = 25°C	Continuous Drain Current	12	A
I_D @ V_GS = 12V, T_C = 100°C	Continuous Drain Current	8.0
I_DM	Pulsed Drain Current	48
P_D @ T_C= 25°C	Max. Power Dissipation	25	W
	Linear Derating Factor	0.2	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	350	mJ
I_AR	Avalanche Current	12	A
E_AR	Repetitive Avalanche Energy	2.5	mJ
dv/dt	Peak Diode Recovery dv/dt	2.3	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 ( for 5s)
	Weight	0.42 (Typical)	g

IRHE57Z30 Features

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight

IRHE7110 General Description

International Rectifier's RAD HARD technolog HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x10⁶Rads(Si). Under identical pre- and post-irradiation test ions, In ternational Rectifier's RAD HARD HEXFETs retaiidentical electrical specifications up to 1 x 10⁵Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization es high as 1 x 10¹²Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process lizes International Rectifier's patented HEXFET technology the user can expect the highest quality and reliability in the ustry.

RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, suchas voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.

IRHE7110 Maximum Ratings

	Parameter	IRHE7130, IRHE8130	Units
I_D @V_GS= 12V,T_C=25	CContinuous Drain Curren	3.5	A
I_D@V_GS=12V,T_C =100	CContinuous Drain Curren	2.2
I_DM	Pulsed Drain Current	14
P_D @ T_C= 25	CMax. Power Dissipation	15	W
	Linear Derating Factor	0.12	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	68	mJ
dv/dt	Peak Diode Recovery dv/dt	5.5	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063 in. (1.6mm) from case for 10s)
	Weight	0.42 (typical)	g

IRHE7110 Features

·Radiation Hardened up to 1 x 10 ⁶Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light Weight

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components