IRH7130

The IRH7130 is a kind of 100V, N-channel. International Rectifier's RADHard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRH7130 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. These devices IRH7130 have been characterized for both Total Dose and Single Event Effects The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

The features of IRH7130 can be summarized as (1)single event effect (see) hardened; (2)low rds(on); (3)low total gate charge; (4)proton tolerant; (5)simple drive requirements; (6)ease of paralleling; (7)hermetically sealed; (8)ceramic package; (9)light weight; (10).

The absolute maximum ratings of IRH7130 are (1)ID@ VOS = 12V, TO = 25°C continuous drain current: 14A; (2)ID@ VOS = 12V, TO = 100°C continuous drain current: 9.0 A; (3)pulsed drain current: 56A; (4)PD @ TO = 25°C Max. power dissipation: 75W; (5)linear denting factor: 0.60 W/°C; (6)VGS gate-to-source voltage: ±20; (7)EAS single pulse avalanche energy: 160 mJ; (8)IAR avalanche current: 14 A; (9)EAR repetitive avalanche energy: 7.5 mJ; (10)dv/dt peak diode recovery dv/dt: 5.5 V/ns; (11)TJ operating junction, TSTG storage temperature range: -55 to 150°C.