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IRH7150

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current ...

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SeekIC No. : 004377938 Detail

IRH7150: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

IRH7150 Data Sheet

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Part Number:
IRH7150
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
34
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
21
IDM
 Pulsed Drain Current
136
PD @ TC = 25°C
 Max. Power Dissipation
150
W
 Linear Derating Factor
1.2
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
500
mJ
IAR
 Avalanche Current
34
A
EAR
 Repetitive Avalanche Energy
15
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
  Weight
11.5(Typical)
g
For footnotes refer to the last page




Description

International Rectifier's RADHard HEXFET® technology IRH7150 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRH7150 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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