IRHNA7264SE, IRHNA7360SE, IRHNA7460SE Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:2010+
IRHNA7264SE, IRHNA7360SE, IRHNA7460SE Datasheet download
Part Number: IRHNA7264SE
MFG: IR
Package Cooled: N/A
D/C: 2010+
IRHNA7264SE, IRHNA7360SE, IRHNA7460SE
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Info of IRHNA7264SE
Info of IRHNA7360SE
Info of IRHNA7460SE
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About IRHNA7264SE
PDF/DataSheet Download
Datasheet: IRHNA7264SE
File Size: 130967 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHNA7360SE
PDF/DataSheet Download
Datasheet: IRHNA7360SE
File Size: 141103 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHNA7460SE
PDF/DataSheet Download
Datasheet: IRHNA7460SE
File Size: 142886 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHNA7264SE General Description
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHNA7264SE Maximum Ratings
| Parameter | IRHNA7264SE | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 34 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 21 | |
| IDM | Pulsed Drain Current | 136 | |
| PD @ TC = 25 | Max. Power Dissipation | 300 | W |
| Linear Derating Factor | 2.4 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 34 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.0 | V/ns |
| TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
| Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
| Weight | 3.3 (Typical) | g |
IRHNA7264SE Features
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
IRHNA7360SE General Description
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHNA7360SE Maximum Ratings
| Parameter | IRHNA7360SE | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 24.3 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 15.3 | |
| IDM | Pulsed Drain Current | 97.2 | |
| PD @ TC = 25 | Max. Power Dissipation | 300 | W |
| Linear Derating Factor | 2.4 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 24.3 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.0 | V/ns |
| TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
| Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
| Weight | 3.3 (Typical) | g |
IRHNA7360SE Features
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
IRHNA7460SE General Description
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHNA7460SE Maximum Ratings
| Parameter | IRHNA7460SE | Units | |
| ID @ VGS =± 12V, TC = 25V | Continuous Drain Current | 20 | A |
| ID @ VGS =± 12V, TC = 100 | Continuous Drain Current | 12 | |
| IDM | Pulsed Drain Current | 80 | |
| PD @ TC = 25 | Max. Power Dissipation | 300 | W |
| Linear Derating Factor | 2.4 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 20 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
| Weight | 3.3 (Typical) | g |
IRHNA7460SE Features
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
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