IRHN9130, IRHNA57163SE, IRHNA57Z60 Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:2010+
IRHN9130, IRHNA57163SE, IRHNA57Z60 Datasheet download
Part Number: IRHN9130
MFG: IR
Package Cooled: N/A
D/C: 2010+
MFG:IR Package Cooled:N/A D/C:2010+
IRHN9130, IRHNA57163SE, IRHNA57Z60 Datasheet download
MFG: IR
Package Cooled: N/A
D/C: 2010+
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Datasheet: IRHN9130
File Size: 123472 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRHNA57163SE
File Size: 151014 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: IRHNA57Z60
File Size: 107701 KB
Manufacturer:
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International Rectifier's P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter | IRHN9130 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | -11 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | -7.0 | |
IDM | Pulsed Drain Current | -44 | |
PD @ TC = 25 | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.60 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | -11 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | -5.5 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Package Mounting Surface Temperature | 300 (for 5 seconds) | ||
Weight | 2.6 (Typical) | g |
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 75* | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 62 | A |
IDM | Pulsed Drain Current ➀ | 300 | A |
PD @ TC = 25°C | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 280 | mJ |
IAR | Avalanche Current ➀ | 75 | A |
EAR | Repetitive Avalanche Energy ➀ | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 5.5 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 3.3 (Typical ) | g |
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 75* | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 75* | A |
IDM | Pulsed Drain Current ➀ | 300 | A |
PD @ TC = 25°C | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
IAR | Avalanche Current ➀ | 75 | A |
EAR | Repetitive Avalanche Energy ➀ | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 0.83 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 3.3 (Typical ) | g |