IRHN7250, IRHN7250SE, IRHN7450 Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:00+
IRHN7250, IRHN7250SE, IRHN7450 Datasheet download
Part Number: IRHN7250
MFG: IR
Package Cooled: N/A
D/C: 00+
IRHN7250, IRHN7250SE, IRHN7450
- Table of contents:
Info of IRHN7250
Info of IRHN7250SE
Info of IRHN7450
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About IRHN7250
PDF/DataSheet Download
Datasheet: IRHN7250
File Size: 601109 KB
Manufacturer: IRF [International Rectifier]
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About IRHN7250SE
PDF/DataSheet Download
Datasheet: IRHN7250SE
File Size: 130044 KB
Manufacturer:
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About IRHN7450
PDF/DataSheet Download
Datasheet: IRHN7450
File Size: 317696 KB
Manufacturer: IRF [International Rectifier]
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IRHN7250 General Description
International Rectifier's MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHN7250 Maximum Ratings
| Parameter | IRHN7250, IRHN8250 | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 26 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 16 | |
| IDM | Pulsed Drain Current | 104 | |
| PD @ TC = 25 | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 26 | A |
| EAR | Repetitive Avalanche Energy | 16 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
| Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
| Weight | 2.6 (Typical) | g |
IRHN7250 Features
·Radiation Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light-weight
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light-weight
IRHN7250SE Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 26 | A |
| ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 16 | A |
| IDM | Pulsed Drain Current ➀ | 104 | A |
| PD @ TC = 25°C | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
| IAR | Avalanche Current ➀ | 26 | A |
| EAR | Repetitive Avalanche Energy ➀ | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt ➂ | 5.9 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | oC |
| Lead Temperature | 300 for 5 sec) | oC | |
| Weight | 2.6 (Typical ) | g |
IRHN7250SE Features
· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
IRHN7450 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 11 | A |
| ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 7.0 | A |
| IDM | Pulsed Drain Current | 44 | A |
| PD @ TC = 25°C | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 11 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
| TJ | Operating Junction | -55 to 150 | oC |
| TSTG | Storage Temperature Range | oC | |
| Pckg. Mounting Surface Temp. | 300 (for 5s) | oC | |
| Weight | 2.6 (Typical) | g |
IRHN7450 Features
· Radiation Hardened up to 1 x 106 Rads (Si)
· Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electrically Isolated
· Ceramic Eyelets
· Surface Mount
· Light Weight
· Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electrically Isolated
· Ceramic Eyelets
· Surface Mount
· Light Weight
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